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The memory comes with a promise of a power consumption reduction of 40% compared to current commercial DDR2 modules, due to DDR3's 90 nm fabrication technology, allowing for lower operating currents and voltages (1.5 V, compared to DDR2's 1.8 V or DDR's 2.5 V). ''Dual-gate'' transistors will be used to reduce leakage of current.
DDR3's prefetch buffer width is 8 bit, whereas DDR2's is 4 bit, and DDR's is 2 bit.
Chips * DDR3-800 : DDR3-SDRAM memory chips specified to run at 100 MHz, I/O clock at 400 MHz
* DDR3-1066: DDR3-SDRAM memory chips specified to run at 133 MHz, I/O clock at 533 MHz
* DDR3-1333: DDR3-SDRAM memory chips specified to run at 166 MHz, I/O clock at 667 MHz
* DDR3-1600: DDR3-SDRAM memory chips specified to run at 200 MHz, I/O clock at 800 MHz
Sticks/Modules * PC3-6400: DDR3-SDRAM memory stick specified to run at 400 MHz using DDR3-800 chips, 6.40 GB/s bandwidth
* PC3-8500: DDR3-SDRAM memory stick specified to run at 533 MHz using DDR3-1066 chips, 8.53 GB/s bandwidth
* PC3-10600: DDR3-SDRAM memory stick specified to run at 667 MHz using DDR3-1333 chips, 10.67 GB/s bandwidth
* PC3-12800: DDR3-SDRAM memory stick specified to run at 800 MHz using DDR3-1600 chips, 12.80 GB/s bandwidth
Features DDR3 SDRAM Components: * Introduction of asynchronous RESET pin * Support of system level flight time compensation * On-DIMM Mirror friendly DRAM ballout * Introduction of CWL (CAS Write Latency) per speed bin * On-die IO calibration engine * READ and WRITE calibration
DDR3 Modules: * Fly-by command/address/control bus with On-DIMM termination * High precision calibration resistors
Advantages compared to DDR2 * Higher bandwidth (up to 1600 MHz) * Performance increase at low power * Longer battery life in laptops * Enhanced low power features and thermal design
Disadvantages compared to DDR2 * Commonly higher CAS Latency * Lower MFIBS per Quad Cycle